APTGU30DDA60T3 aptgu30dda60t 3? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 1 - 6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 48 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 120 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 156 w ssoa switching safe operating area t j = 150c 120a @ 600v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. 23 22 13 q1 cr 1 30 8 q2 7 14 cr2 16 r1 29 15 26 27 4 3 31 32 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 600v i c = 30a @ tc = 80c applicatio n ? ac and dc motor control ? switched mode power supplies ? power factor correction features ? power mos 7 ? punch through (pt) igbt - low co nd uctio n loss - ul tra fast tail current shutoff - low gate c harge - switching frequency capability in the 200khz range - soft recovery parallel diodes - low diode vf ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design ? internal thermistor for temperature monitoring ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq uenc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? each leg can be easily paralleled to achieve a single boost of twice the current capab ility. d ual boost choppe r p t igbt power module
APTGU30DDA60T3 aptgu30dda60t 3? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 2 - 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 500a 600 v t j = 25c 500 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 3000 a t j = 25c 2.2 2.7 v ce(on) collector emitter on voltage v ge =15v i c = 30 a t j = 125c 2.1 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 3 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3200 c oes output capacitance 295 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 20 pf q g total gate charge 90 q ge gate ? emitter charge 20 q gc gate ? collector charge v ge = 15v v bus = 300v i c = 30a 30 nc t d(on) tur n-o n delay ti me 13 t r rise time 18 t d(off) turn-off delay time 55 t f fall time 46 ns e on1 turn-on switching energy 260 e on2 tur n-o n switchi ng energy x 335 e off turn-off switching energy y inductive switching (25c) v ge = 15v v bus = 400v i c = 30a r g = 5 ? 250 j t d(on) tur n-o n delay ti me 13 t r rise time 18 t d(off) turn-off delay time 84 t f fall time 80 ns e on1 turn-on switching energy 260 e on2 tur n-o n switchi ng energy x 508 e off turn-off switching energy y inductive switching (125c) v ge = 15v v bus = 400v i c = 30a r g = 5 ? 518 j x e on2 includes diode reverse recovery y in accordance with jedec standard jesd24-1 temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k ? b 25/85 t 25 = 298.16 k 4080 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 t: thermistor temperature r t : thermistor value at t
APTGU30DDA60T3 aptgu30dda60t 3? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 3 - 6 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f(a v) maximum average forward current 50% duty cycle tc = 85c 30 a i f = 30a 2.2 2.7 i f = 60a 2.7 v f diode forward voltage i f = 30a t j = 150c 1.5 v t j = 25c 74 t rr reverse recovery time t j = 100c 74 ns t j = 25c 123 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 100c 288 nc thermal and package characteristics symbol characteristic min typ max unit igbt 0.8 r thjc junction to case diode 1.2 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 4.7 n.m wt package weight 110 g package outline 17 12 28 1
APTGU30DDA60T3 aptgu30dda60t 3? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 4 - 6 typical performance curve output characteristics (v ge =1 5v) tc=25c tc=125c 0 10 20 30 40 50 60 00.511.522.53 ic, collector current (a) 250s pulse test < 0.5% duty cycle v ce , collector to emitter voltage (v) tc=-55c output characteristics (v ge =1 0v) tc=-55c tc=25c tc=125c 0 10 20 30 40 50 60 00.511.522.53 ic, collector current (a) 250s pulse test < 0.5% duty cycle v ce , collector to emitter voltage (v) transfer characteristics t j =-55c t j =25c t j =125c 0 30 60 90 120 150 180 1357911 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle gate charge 0 2 4 6 8 10 12 14 16 18 0 20406080100 gate charge (nc) i c = 30a t j = 25c v ge , gate to emitter voltage (v) v ce =120v v ce =300v v ce =480v ic=60a ic=30a ic=15a 0 0.5 1 1.5 2 2.5 3 3.5 6 8 10 12 14 16 v ge , gate to emitter voltage (v) t j = 25c 250s pulse test < 0.5% duty cycle on state voltage vs gate to emitter volt. v ce , collector to emitter voltage (v) ic=60a ic=30a ic=15a 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) 250s pulse test < 0.5% duty cycle v g e = 1 5v v ce , collector to emitter voltage (v) on state voltage vs junction temperature 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50-250 255075100125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature
APTGU30DDA60T3 aptgu30dda60t 3? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 5 - 6 v ge = 15v v ge = 10v 0 5 10 15 20 25 0 10203040506070 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) v ce = 400v t j = 25c, t j = 125c r g = 5 ? , l=100h turn-on delay time vs collector current 20 40 60 80 100 0 10203040506070 i ce , collector to emitter current (a) v ce = 400v r g = 5 ? , l=100h v ge =10v, t j =25c v ge =15v, t j =25c v ge =10v, t j =125c v ge =15v, t j =125c td(off), turn-off delay time (ns) turn-off delay time vs collector current 0 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) tr, rise time (ns) v ce = 400v, r g = 5 ? , l=100h v ge =15v, t j =125c v ge =10v, t j =1 25 c current rise time vs collector current t j = 25c t j = 125c 0 20 40 60 80 100 0 10203040506070 i ce , collector to emitter current (a) tf, fall time (ns) v ce = 400v, v ge = 15v, r g = 5 ? , l=100h current fall time vs collector current t j =25c, v ge =15v t j =25c, v ge =10v t j =1 25 c , v ge =10v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 10203040506070 i ce , collector to emitter current (a) v ce = 400v r g = 5 ? eon2, turn-on energy loss (mj) t j =125c, v g e =15v turn-on energy loss vs collector curren t t j = 25c t j = 125c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 10203040506070 i ce , collector to emitter current (a) eoff, turn-off energy loss (mj) v ce = 400v v ge = 15v r g = 5 ? turn-off energy loss vs collector current eoff, 60a eoff, 30a eon2, 15a eoff, 15a 0 0.5 1 1.5 2 2.5 0 102030405060 gate resistance (ohms) switching energy losses (mj) v ce = 400v v ge = 15v t j = 125c switching energy losses vs gate resistance e o n2 , 60 a eon2 , 30a eoff, 60a eoff, 30a eon2, 15a eoff, 15a 0 0.5 1 1.5 0 255075100125 t j , junction temperature (c) switching energy losses (mj) v ce = 400v v ge = 15v r g = 5 ? switching energy losses vs junction temp. e o n2 , 60 a eon2, 30a
APTGU30DDA60T3 aptgu30dda60t 3? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 6 - 6 cies cres coes 10 100 1000 10000 0 1020304050 c, capacitance (pf) v ce , collector to emitter voltage (v) capacitance vs collector to emitter voltage 0 20 40 60 80 100 120 140 0 200 400 600 800 i c , collector current (a) minimum switching safe operating area v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 rectangular pulse duration (seconds) thermal impedance (c/w) maxim um effective transient thermal impedance, junction to case vs p ulse duration hard switching zcs zvs 0 40 80 120 160 200 240 280 0 1020304050 i c , collector current (a) v ce = 400v d = 50% r g = 5 ? t j = 125c t c = 75c operating frequency vs collector current fmax, operating frequency (khz) apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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